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用ＡｒＦ脉冲准分子激光在ＳＯＩ和Ｐｔ／ＳＯＩ衬底上沉积了Ｐｂ（Ｚｒ，Ｔｉ）Ｏ＿３铁电薄膜，并用快速退火进行热处理。ｘ射线衍射、卢瑟辐背散射等分析表明：所结晶的薄膜是以（１００）和（１１０）为主要取向的多晶膜，且结晶情况与热处理温度和时间密切相关；ＰＺＴ薄膜呈现铁电性，其剩余极化Ｐｒ＝１５μｃ／ｃｍ￣２，矫顽电场Ｅｃ＝５０ｋＶ／ｃｍ；并且具有较高的介电常数和较高的电阻率。
Pb (Zr, Ti) O3 ferroelectric thin films were deposited on SOI and Pt / SOI substrates by ArF pulsed excimer laser and annealed by rapid annealing. X-ray diffraction and Rutherford backscattering analysis show that the crystallized films are polycrystalline films with (100) and (110) as the main orientations, and the crystallization is closely related to the temperature and time of heat treatment. The PZT films exhibit ferroelectric Its residual polarization Pr = 15μc / cm ~ 2, coercive field Ec = 50kV / cm; and has a higher dielectric constant and higher resistivity.