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掺杂是改善氧化钛纳米结构半导体特性的有效方法。在醇基电解液中,采用阳极氧化方法在TiNi合金表面成功制备出Ni-Ti-O纳米管阵列。通过扫描电子显微镜(SEM)、X射线衍射仪(XRD)和X射线光电子能谱仪(XPS)等分析方法对纳米管阵列的表面形貌、微结构和热稳定性进行了表征,研究了退火后纳米管阵列的氢敏性能和抗干扰性。实验结果表明:在醇基电解质液中,采用阳极氧化方法在TiNi合金表面可制备出大面积均匀生长的Ni-Ti-O纳米管阵列,其管长约为220 nm,管径约为25 nm。经525℃热处理后其表面仍可保持规则的纳米阵列形貌。热处理后的Ni-Ti-O纳米管阵列在100℃对体积分数为0.1%的氢气具有良好的氢敏响应特性,对相同浓度的N2和NO则无明显响应。
Doping is an effective method to improve the properties of titanium oxide nanostructured semiconductors. In alcohol-based electrolyte, Ni-Ti-O nanotube arrays were successfully prepared on TiNi alloy by anodic oxidation. The surface morphology, microstructure and thermal stability of nanotube arrays were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) Hydrogen Sensitivity and Anti-interference of Post-nanotube Arrays. The experimental results show that Ni-Ti-O nanotube arrays with large area and uniform growth can be prepared on the surface of TiNi alloy by anodization in alcohol-based electrolyte solution. The tube length is about 220 nm and the diameter is about 25 nm . After the heat treatment at 525 ℃ its surface can still maintain a regular nano-array morphology. The Ni-Ti-O nanotube arrays after heat treatment showed good hydrogen-sensitive response to hydrogen at 0.1% volume fraction at 100 ℃ and no obvious response to N2 and NO at the same concentration.