论文部分内容阅读
采用NbZr/Cu复合管作为外包套材料,用粉末装管工艺(PIT)制备出千米级TiC掺杂的多芯MgB2/NbZr/Cu线材。在流动高纯氩气保护下、650～800℃温度区间内烧结2h。微观结构分析显示,该工艺制备的MgB2/NbZr/Cu线材具有良好的晶粒连结性和较高的致密度。采用标准的四引线法,在4.2K不同磁场下测试线材的临界电流密度,在10T时,线材临界电流密度Jc达到1.8×104A/cm2。
NbZr / Cu composite tube was used as sheath material, and multi-core MgB2 / NbZr / Cu wire with kilometer-class TiC doping was prepared by powder tube packing process (PIT). In the flow of high purity argon protection, 650 ~ 800 ℃ temperature range sintering 2h. Microstructure analysis showed that the MgB2 / NbZr / Cu wire prepared by the process has good grain-joining and higher density. The standard four-lead method is used to test the critical current density of the wire under different magnetic fields of 4.2K. At 10T, the critical current density Jc of the wire reaches 1.8 × 104A / cm2.