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采用等离子体增强化学气相沉积技术沉积一系列处于不同生长阶段的微晶硅薄膜.通过同步辐射X射线掠角反射技术研究微晶硅薄膜的表面粗糙度随时间等的演化,探讨微晶硅薄膜的生长动力学过程及其生长机制.研究结果表明,在衬底温度为200℃,电极间距为2cm,沉积气压为6.66×102Pa,射频功率密度为0.22W/cm2,氢稀释度分别为99%和98%的沉积条件下,在玻璃衬底上生长的微晶硅薄膜生长指数β分别为0.21±0.01和0.24±0.01.根据KPZ模型,微晶硅薄膜的生长机制为有限扩散生长.
A series of microcrystalline silicon thin films deposited at different growth stages were deposited by plasma-enhanced chemical vapor deposition technique. The evolution of surface roughness of microcrystalline silicon thin films with time and other factors was studied by synchrotron radiation X-ray grazing angle reflection technique. The results showed that the substrate temperature was 200 ℃, the distance between electrodes was 2cm, the deposition pressure was 6.66 × 102Pa, the RF power density was 0.22W / cm2, and the hydrogen dilutions were 99% And 98%, the growth index of microcrystalline silicon thin films grown on glass substrates were 0.21 ± 0.01 and 0.24 ± 0.01, respectively.According to the KPZ model, the growth mechanism of microcrystalline silicon thin films was limited diffusion growth.