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本文比较先在硅衬底上沉积无定形金刚石膜，然后再沉积金刚石膜，和直接在硅衬底上沉积金刚石膜的结果，前者成核密度大大提高，最后分析了提高成核密度的原因。
In this paper, the amorphous diamond films were first deposited on the silicon substrate, then the diamond films were deposited and the diamond films were directly deposited on the silicon substrate. The nucleation density of the former was greatly increased. Finally, the reason of increasing the nucleation density was analyzed.