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本工作首次采用液态源在200℃低温下PECVD淀积SiO_2和PSG膜,用于3DD系列功率晶体管的台面钝化.通过台面钝化和表面局部剥离钝化膜的工艺,晶体管的电学特性明显地变好,较大幅度地提高了烧结工艺的成品率,并对钝化过程中出现的问题进行了理论分析.钝化膜具有较好地抗Na~+、Cu~(++)离子沾污的能力,全面地通过了例行实验的考核,这种新工艺必将对晶体管生产效率和稳定性产生可观的影响.
In this work, SiO 2 and PSG films were deposited by PECVD using a liquid source at a low temperature of 200 ℃ for the mesa passivation of the 3DD series power transistors.The electrical properties of the transistors were significantly improved by mesa passivation and surface partial delamination passivation The results show that the passivation film has better resistance to Na ~ + and Cu ~ (++) ions The ability to fully pass the routine test assessment, this new technology will certainly have a significant impact transistor production efficiency and stability.