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对InGaN量子阱LED的内量子效率进行了优化研究。分别对发光光谱、量子阱中的载流子浓度、能带分布、静电场和内量子效应进行了理论分析。对具有不同量子阱数量的InGaN/GaN LED进行了理论数值比对研究。研究结果表明,对于传统结构的LED而言,2个量子阱的结构相对于5个和7个量子阱具有更好的光学性能。同时还研究了具有三角形量子阱结构的LED,研究结果显示,三角形多量子阱结构具有较高的电致发光强度、更高的内量子效率和更好的发光效率,所有的优点都归因于较高的电子-空穴波函数重叠率和低的Stark效应所产生的较高的载流子输入效率和复合发光效率。
The internal quantum efficiency of InGaN quantum well LED has been optimized. The luminescence spectra, carrier concentration in quantum well, band distribution, electrostatic field and internal quantum effect were analyzed respectively. Theoretical comparison of InGaN / GaN LEDs with different quantum well numbers has been carried out. The results show that the structure of the two quantum wells has better optical performance with respect to the five and seven quantum wells for a conventional LED. At the same time, we also study the LED with triangular quantum well structure. The results show that the triangular multi-quantum well structure has higher electroluminescence intensity, higher internal quantum efficiency and better luminescence efficiency. All the advantages are attributed to Higher electron-hole wave function overlap rate and higher Stark effect produce higher carrier input efficiency and recombination luminous efficiency.