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首先描述了移位损伤的机理及其影响器件性能的机制,引入了适合航天器工程抗辐射加固设计使用的 移位损伤剂量模型,探讨了其在CCD器件电荷传输效率CTE,Si器件平均暗电流以太阳电池阵输出功率等工 程参数衰降中的应用,介绍了建立的基于移位损伤剂量模型的空间环境中CCD器件CTE衰降预测模式,其结 果与欧空局空间环境信息系统的计算结果相吻合.该程序在光电器件抗辐射加固设计中具有重要的应用价值.
Firstly, the mechanism of displacement damage and its mechanism of device performance are described. The displacement damage dose model suitable for spacecraft engineering radionuclide reinforcement design is introduced. The effects of charge transfer efficiency (CTE) of CCD device, average dark current Based on the application of the decay of engineering parameters such as the output power of solar array, the CTE decay prediction model of CCD device in space environment based on displacement damage dose model is introduced. The result is in good agreement with the ESA results of ESA The procedure is of great value in anti-radiation reinforcement design of optoelectronic devices.