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采用共溅射方法和Eu离子注入热生长的SiO2 方法得到SiO2 (Eu)薄膜 ,Eu离子的浓度为 4%和 0 .5 % .对样品X射线吸收近边结构 (XANES)的研究和分析表明 ,在高温氮气中发生了Eu3+向Eu2 +的转变 .SiO2 (Eu)薄膜高温氮气退火下蓝光的发射证明了这一结论
The SiO2 (Eu) thin films were grown by co-sputtering method and Eu ion implantation thermal growth method, and the concentration of Eu ions was 4% and 0.5% .The research and analysis on the XANES (near-X-ray structure) , The transition of Eu3 + to Eu2 + occurred in the high temperature nitrogen gas.The emission of blue light of SiO2 (Eu) thin film annealed at high temperature proved this conclusion