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本文叙述了使用电子碰撞离子源产生的离子束和中性ClF_3定向流的化学辅助离子束刻蚀(CAIBE)技术。此技术能刻蚀钨箔和厚度超过40μ的钨膜,具有好的方向性,在39mm~2的面积上模子清晰,并具有高的选择性。(100)钨箔用CAIBE刻蚀显示了好的方向性,而多晶钨膜显示了高的刻蚀速率。在行波管中能用此技术作为模子,在阴极表面上当电子发射时达到控制孔隙率的目的。
This paper describes the chemical assisted ion beam etching (CAIBE) technique of ion beam and neutral ClF_3 directed flow generated by electron impact ion source. This technology can etch tungsten foil and tungsten film with a thickness of more than 40μ and has good directivity. It has clear mold and high selectivity in the area of 39mm ~ 2. The (100) tungsten foil showed good directivity with CAIBE etching, whereas the polycrystalline tungsten film showed a high etch rate. In traveling-wave tubes this technique can be used as a mold to achieve porosity control when electrons are emitted on the cathode surface.