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采用ZYGOMarkⅢ GPI数字波面干涉仪对电子束蒸发方法制备的ZrO2 薄膜中的残余应力进行了研究 ,讨论了沉积温度、沉积速率等工艺参量对ZrO2 薄膜残余应力的影响。实验结果表明 :随着沉积温度及沉积速率的升高 ,ZrO2 薄膜中残余应力状态由张应力变为压应力 ,且压应力值随着沉积温度升高而增大。同时用X射线衍射技术测量分析了不同沉积条件下ZrO2 薄膜的微结构组织 ,探讨了ZrO2 薄膜微结构与其应力的对应关系
The ZYGOMark Ⅲ GPI digital interferometer was used to study the residual stress in the ZrO2 thin film deposited by the electron beam evaporation method. The effects of deposition temperature, deposition rate and other parameters on the residual stress of the ZrO2 thin film were discussed. Experimental results show that with the increase of deposition temperature and deposition rate, the residual stress state of ZrO2 thin film changes from tensile stress to compressive stress, and the compressive stress increases with increasing deposition temperature. At the same time, the microstructures of ZrO2 thin films under different deposition conditions were measured and analyzed by X-ray diffraction, and the corresponding relationship between the microstructure of ZrO2 thin films and their stress