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用金属有机化学气相沉积技术在三种不同型号的反应管中生长了GaN∶Si膜。通过对样品的光电及结晶性能的分析 ,研究了气流混合时间不同对GaN∶Si膜性质的影响。结果表明 :合理的Ⅲ、Ⅴ族气流混合对提高GaN∶Si膜的光电及结晶性能很重要。Ⅲ、Ⅴ族气流混合太早 ,气流混合时间长 ,GaN∶Si膜的黄带与带边发射强度之比较大 ,X射线双晶衍射半高宽较宽 ;Ⅲ、Ⅴ族气流混合太晚 ,尽管可减少预反应 ,但气流混合不均匀 ,致使GaN∶Si膜的发光性能及结晶性能变差。使用Ⅲ、Ⅴ族气流混合适中的反应管B生长 ,获得了光电及结晶性能良好的GaN∶Si单晶膜。
GaN: Si films were grown in three different types of reaction tubes by metal-organic chemical vapor deposition. Through the analysis of the photoelectric and crystallization properties of the sample, the influence of different mixing time of air flow on the properties of GaN: Si film was studied. The results show that reasonable mixing of Ⅲ and Ⅴ gas flows is very important to improve the optoelectronic and crystallization properties of GaN: Si films. Ⅲ, Ⅴ gas flow mixed too early, the gas mixture for a long time, GaN: Si film yellow band and the edge of the emission intensity is relatively large, X-ray double crystal diffraction wide FWHM; Ⅲ, Ⅴ gas flow mixture too late, Although the pre-reaction can be reduced, the gas flow is not uniformly mixed, resulting in poor luminescent properties and crystalline properties of the GaN: Si film. Using III and V gas flow mixed moderate tube B growth, obtained photovoltaic and crystalline good GaN: Si single crystal film.