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在MOCVD质量控制生长模式下 ,通过分析Ⅲ -V族化合物半导体材料在衬底表面的反应过程 ,建立了一个实用的生长模型。此模型是基于分子动力学、化学反应热力学理论分析之上的。针对Turbo -Disc反应体系 ,分析了Turbo -Disc的传热以及质量传送模式后 ,建立了Turbo -Disc的生长模型。在此模型中建立了输入反应室的参数 (IPs)和边界层的生长参数的关系。在对组分匹配的GaInP/GaAs三组分生长体系进行分析时 ,发现此模型是非常有效的 ,理论计算的结果与实验得到的结果非常吻合。应用此模型在实际生产中可以迅速地得到匹配的多组分外延层。
In MOCVD mode, a practical growth model was established by analyzing the reaction process of III-V compound semiconductor on the substrate surface. This model is based on molecular dynamics and chemical reaction thermodynamics. For Turbo-Disc reaction system, the growth model of Turbo-Disc was established after analyzing the heat transfer and mass transfer mode of Turbo-Disc. In this model, the relationship between the input reaction chamber parameters (IPs) and the boundary layer growth parameters is established. This model was found to be very effective in analyzing GaInP / GaAs three-component growth system with component matching. The theoretical calculation is in good agreement with the experimental results. The application of this model in the actual production can quickly get matching multi-component epitaxial layer.