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通过分析P沟差分对输入CMOS运放电路内部单管特性、各节点电流、电压及运放整体电路在电离辐射环境中损伤特性的变化 ,探讨了引起运放电特性退化的主要原因。结果显示 ,由于差分对PMOSFET输出特性Ids-Vds的不对称 ,在辐照中引起的镜像恒流源的不匹配 ,是导致运放电参数发生剧变的根本原因。对CMOS运放电路来说 ,电路结构的匹配及MOSFET单管I -V特性的优劣 ,是决定运放抗辐射能力的关键。
By analyzing the characteristics of the single-channel input of the CMOS op amp circuit, the current and voltage of each node, and the damage characteristics of the optoelectronic circuit in the ionizing radiation environment, the main reasons for the degeneration of the op amp are discussed. The results show that due to the asymmetry of the differential pair PMOSFET output characteristics Ids-Vds, the mismatch of the mirror constant current source caused by irradiation is the fundamental reason causing the drastic change of the op amp parameters. For the CMOS op amp circuit, the matching of the circuit structure and the advantages and disadvantages of the I-V characteristic of the single MOSFET is the key to determine the radiation resistance of the op amp.