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A novel D-π-A type α-cyanostilbenzene derivative,(Z)-2-(4-aminophenyl)-3-(4-bromophenyl)-acrylonitrile(ABAN), was designed and synthesized, by introducing an electrondonating amino group and a heavy atom. The structure of ABAN was confirmed by FT-IR, 1H NMR, 13 C NMR spectra and single-crystal X-ray diffraction analysis. The ABAN is of orthorhombic system, space group P212121, with a = 8.6100(14), b = 9.6923(16), c = 15.705(3) ?, Mr = 299.17, V = 1310.6(4) ?3, Z = 4, Dc = 1.516 g/cm-3, μ = 3.119 mm-1, F(000) = 600, Rint = 0.038, R(I > 2σ(I)) = 0.0276, w R(I > 2σ(I)) = 0.0628, R(all data) = 0.0324, wR(all data) = 0.0646, completeness to theta = 25.00 was 99.8% and GOOF = 1.04. In the crystal structure, ABAN molecules were linked with each other through intermolecular C–H···π interactions and N–H···N hydrogen bonds, by which the 1D chain, 2D plane and 3D stacking structures were constructed. The photophysical properties and calculation results confirmed that ABAN possessed an intramolecular charge transfer(ICT) process. ABAN could be applied into the optoelectronic material field due to good solvent-tuned photophysical properties and highly thermal stability.
A novel D-π-A type α-cyanostilbenzene derivative, (Z) -2- (4-aminophenyl) -3- (4-bromophenyl) -acrylonitrile (ABAN), was designed and synthesized by a group of electrondonating amino group and The structure of ABAN was confirmed by FT-IR, 1 H NMR, 13 C NMR spectra and single-crystal X-ray diffraction analysis. The ABAN is an orthorhombic system, space group P212121, with a = 8.6100 (14) , b = 9.6923 (16), c = 15.705 (3) ?, Mr = 299.17, V = 1310.6 (4)? 3, Z = 4, Dc = 1.516 g / cm-3, (000) = 600, Rint = 0.038, R (I> 2σI) = 0.0276, wR (I> 2σI) = 0.0628, all data = 0.0324, all data = 0.0646 , completeness to theta = 25.00 was 99.8% and GOOF = 1.04. In the crystal structure, ABAN molecules were linked with each other through intermolecular C-H ··· π interactions and N-H ··· N hydrogen bonds, by which the 1D chain, 2D plane and 3D stacking structures were constructed. The photophysical properties and calculation results confirmed that ABAN possesse dAN intramolecular charge transfer (ICT) process. ABAN could be applied into the optoelectronic material field due to good solvent-tuned photophysical properties and highly thermal stability.