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英特尔和美光科技宣布,计划在新加坡建设NAND闪存工厂。将作为300mm晶圆工厂于2007年上半年开工建设。预定2008年下半年投产,将采用50nm工艺技术生产。该工厂将通过两公司成立的合资公司建设。英特尔和美光于2006年1月成立了开发、生产NAND闪存的合资公司IM Flash Technologies
Intel and Micron announced plans to build NAND flash memory plant in Singapore. Will be 300mm wafer fab started construction in the first half of 2007. Scheduled to put into operation in the second half of 2008, will use 50nm process technology. The plant will be built by a joint venture between the two companies. Intel and Micron in January 2006 established a joint venture to develop and produce NAND flash memory IM Flash Technologies