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为了保证ECL RAM组件上机后能可靠工作,需要对组件进行严格的测试挑选。通常半导体存储器的测试可分为三类:静态参数测试、动态参数测试、动态功能测试。但是动态参数与所选择的动态测试图案有关。根据我们的实验,乒乓与跳步写恢复图案可测得最大的地址取数时间t_(AA)。分析了存储单元的写入原理之后,我们认为测试最小写入脉冲宽度t_(WW),既要考虑正常写入周期写入控制波对地址变化的延迟t_(WSA)较小的情况,又要考虑同一地址先为读出周期,再为写周期,将写入控制波对地址变化的延迟加长的情况。采用这种图案的乒乓和跳步写恢复图案可测得最大的twsA。动态功能测试还测试存储单元的抗打扰能力,在这方面,乒乓和跳步写恢复图案最严格、走步次之、求反更差。对组件还应进行工作范围的测试,讨论了影响工作范围的测试条件。并发现有个别组件在低频时电源电压工作范围的上限减小。使用时应剔除工作范围不合格的组件。
To ensure reliable operation of the ECL RAM components on board, rigorous testing of components is required. Usually the semiconductor memory test can be divided into three categories: static parameter testing, dynamic parameter testing, dynamic function testing. However, the dynamic parameters are related to the selected dynamic test pattern. According to our experiments, the ping-pong and jump-step recovery patterns can be measured at the maximum address fetch time t_ (AA). After analyzing the writing principle of memory cells, we consider that to test the minimum write pulse width t_ (WW), it is necessary to consider the case that the write delay of the write control wave to the address change is small during the normal write cycle, Consider the same address first for the read cycle, and then for the write cycle, will write the control of the address of the wave change delay extension. The largest twsA can be measured using this pattern of ping-pong and skip-step recovery patterns. Dynamic functional tests also test the ability of the memory cells to withstand disturbances. In this regard, ping-pong and skip-step write resume patterns are the strictest ones, followed by strides and negations. The components should also be tested for the working range and the test conditions that affect the working range should be discussed. And found that individual components in low-frequency power supply voltage range of the upper limit to reduce. Use should be removed from the scope of work unqualified components.