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首先介绍了LPIND(Lateral Positive-Intrinsic-Negative Diode)及其在硅基等离子天线方面的应用,并对LPIND进行建模,仿真分析了不同SOI(Silicon On Insulator)埋层材料对LPIND本征区载流子浓度的影响,仿真结果显示,LPIND的自加热效应会降低本征区载流子浓度,通过改变埋层材料,增加埋层的热导率,可以减弱自加热效应。其次给出了LPIND本征区电导率的仿真结果,完成了基于LPIND的半波偶极子天线的设计与仿真,仿真结果显示,本征区电导率和硅衬底厚度会影响天线的回波损耗(S11)。最后总结了降低LPIND静态功耗的有效设计方法。
Firstly, LPIND (Lateral Positive-Intrinsic-Negative Diode) and its application in silicon-based plasmonic antennas are introduced. The LPIND is modeled and the influence of different SOI (Silicon On Insulator) The simulation results show that the self-heating effect of LPIND can reduce the carrier concentration in the intrinsic region. The self-heating effect can be weakened by changing the buried material and increasing the thermal conductivity of the buried layer. Secondly, the simulation results of LPIND intrinsic zone conductivity are given, and the design and simulation of LPIND-based half-wave dipole antenna are completed. The simulation results show that the intrinsic zone conductivity and silicon substrate thickness will affect the antenna echo Loss (S11). Finally, an effective design method to reduce the static power consumption of LPIND is summarized.