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美国Harris公司发明的多晶平面工艺主要是根据介质隔离技术原理的一种改进工艺,它对改善隔离性能、集成度以及电路特性等方面具有广阔的前景。通常的集成电路,元件之间的相互隔离是由扩散在N-型外延层里、且同P-型衬底相接的P+隔离墙来保证的(图1)。这就是P-N结隔离技术。但是,这种技术并不完全令人满意,因而,人们就想以介质隔离技术来取代。而Harris所提出的多晶平面新工艺,实际上是一种混合隔离技术。
The polycrystalline planar technology invented by Harris Company of the United States is mainly an improved process based on the principle of dielectric isolation technology and has broad prospects for improving isolation performance, integration and circuit characteristics. In conventional integrated circuits, the components are isolated from each other by a P + barrier diffused in the N-type epitaxial layer and attached to the P-type substrate (Figure 1). This is P-N junction isolation technology. However, this technique is not entirely satisfactory, so people want to use dielectric isolation technology to replace. Harris proposed polycrystalline planar new technology, is actually a hybrid isolation technology.