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采用光致发光 (PL )谱和傅里叶变换红外 (FTIR)谱研究了掺铒 a- Si Ox∶ H(a- Si Ox∶ H〈 Er〉)薄膜在不同退火温度下光学性质和微观结构的变化 .PL 谱的测量结果表明 :薄膜在 1.5 4 μm的 Er3+发光和 75 0 nm处的可见发光随退火温度有相同的变化趋势 ,这种变化和薄膜在退火过程中微观结构的变化有着密切关系 .FTIR谱的分析表明 :a- Si Ox∶ H薄膜是一种两相结构 ,富硅相镶嵌在富氧相中 .两者的成分可近似用 a- Si Ox≈ 0 .3∶ H和 a- Si Ox≈ 1 .5∶ H表示 ,前者性质接近于氢化非晶硅 (a- Si∶ H ) ,后者性质接近于 a- Si O2 .富硅相在退火中的变化对 Er3+ 的发光强度有重要影响 .
The optical properties and microstructure of Er-doped a-Si Ox: H (a-Si Ox: H ) films at different annealing temperatures were investigated by photoluminescence (PL) and Fourier transform infrared (FTIR) The results of PL spectroscopy showed that the luminescence of Er3 + at 1.5 4 μm and the visible luminescence at 75 0 nm had the same trend as the annealing temperature, which was closely related to the change of microstructure during the annealing The results of FTIR spectroscopy show that the a-Si Ox:H thin film is a two-phase structure, and the silicon rich phase is embedded in the oxygen-rich phase.The compositions of both can be approximated by a-Si Ox≈0.3: H and a-Si Ox ≈ 1 .5: H, the former is close to that of hydrogenated amorphous silicon (a- Si: H), and the latter is close to that of a-Si O2. Intensity has an important influence.