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将红外辐射测温系统用于半导体基片表面温度测量时,系统的调焦状况将影响测温结果的准确性。对这种影响进行了理论计算。结果表明,当被测高温区面积较大时,可以允许较大的调焦范围。但在激光诱导扩散等激光微细加工工艺中,曝光区直径仅数十微米量级,对系统的调焦提出了较高的要求。计算了在可见光波段和近红外波段两种情况下系统成像物镜的焦距。当成像物镜在波长为0.546μm时的焦距为30mm,并固定像距为196mm时,得到在波长为1.335μm时的物距比波长为0.546μm时大1.33mm。利用这个结果,结合在不同物距时系统对被测高温区进行扫描得到的温度分布,提出了调焦的方法。利用该方法,系统物距可调节到最佳物距为中心±0.05mm的范围内,满足了微小面元温度测量的要求。
The infrared radiation temperature measurement system for the semiconductor substrate surface temperature measurement, the system will affect the focus of temperature measurement accuracy. The impact of this theoretical calculation. The results show that when the measured high temperature area is larger, you can allow a larger focus range. However, in laser-induced laser diffusion microfabrication process, the exposed area of only a few tens of microns in diameter, the system’s focus put forward higher requirements. The focal length of the system imaging objective lens in both the visible and near-infrared bands was calculated. When the focal length of the imaging objective lens at a wavelength of 0.546 μm is 30 mm and the fixed image distance is 196 mm, the object distance at a wavelength of 1.335 μm is larger than that at a wavelength of 0.546 μm by 1.33 mm. Using this result, combined with the temperature distribution obtained by scanning the measured high temperature region at different object distances, a focusing method is proposed. With this method, the object distance of the system can be adjusted to the best object distance within the range of ± 0.05mm center to meet the requirements of the temperature measurement of the micro facets.