论文部分内容阅读
随着CMOS工艺的发展,栅介质层厚度不断减薄,导致栅漏电流不断增大,这使传统测量界面态的方法应用受到限制。介绍了采用电荷泵技术用于MOS器件Si/SiO2界面特性研究,分别研究了脉冲频率、反偏置电压、脉冲幅值和占空比对泵电流的影响,对突变曲线做了深入的理论分析,指出了需要严格的选择脉冲频率、幅值、反偏置电压和占空比,才能保证测量的准确性。这些探索为电荷泵技术在MOS器件中的界面电荷测量和电荷泵曲线分析提供实验指导和理论依据。
With the development of CMOS technology, the thickness of the gate dielectric layer is continuously reduced, which leads to the increase of the gate-drain current, which limits the application of the traditional method of measuring the interface state. The research on Si / SiO2 interfacial properties of MOS devices by using charge pump technology is introduced. The effects of pulse frequency, reverse bias voltage, pulse amplitude and duty cycle on pump current are studied respectively. The in-depth theoretical analysis of the abrupt curves , Pointed out the need to strictly select the pulse frequency, amplitude, reverse bias voltage and duty cycle, in order to ensure measurement accuracy. These explorations provide experimental guidance and theoretical basis for the charge pump technology in interfacial charge measurement and charge pump curve analysis in MOS devices.