在大功率应用场合,IGBT或BJT等少子半导体开关在关断时由于存在电流拖尾效应,而产生相当高的关断损耗。为解决此问题,本文用对偶原理构造了一种新型单级隔离功率因数校正开关电源电路,引入了全新的有源箝位零电流开关技术,使主开关的电流被箝位在一个很低的电平上,从而大大降低大功率器件在关断时产生的电流应力，此电路具有很大的应用前景。 In high-power applications, IGBT or BJT and other small sub-semiconductor switches in shutdown due to the current trailing effect, resulting in a very high turn-off loss. In order to solve this problem, this paper constructs a new single-stage isolated power factor correction switching power supply circuit using dual principle, introduces a new active clamp zero current switching technology, the main switch current is clamped at a very low Level, thus greatly reducing the high-power devices produced in the shutdown current stress, this circuit has a great application prospects.