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We reanalyzed experimental data already published in Friedman J R,Zhang Y,Dai P,et al.Phys Rev B,1996,53(15):9528.Variable range hopping(VRH)conduction in the insulating three-dimensional n-CdSe samples has been studied over the entire temperature range from 0.03 to 1 K.In the absence of a magnetic field,the low temperature conductivity σ of the three samples(A,B and C) obeys the Mott VRH conduction with an appropriate temperature dependence in the prefactor(σ=σ_0 exp[-(T_0/T)]~p with p≈0.25).This behavior can be explained by a VRH model where the transport occurs by hopping between localized states in the vicinity of the Fermi level,E_F,without creation of the Coulomb gap(CG).On the contrary,no Efros-Shklovskii VRH is observed,suggesting that the density is constant in the vicinity of the E_F.
We reanalyzed experimental data already published in Friedman JR, Zhang Y, Dai P, et al. Phys Rev B, 1996, 53 (15): 9528. Variable range hopping (VRH) conduction in the insulating three-dimensional n-CdSe samples has has studied over the entire temperature range from 0.03 to 1 K. In the absence of a magnetic field, the low temperature conductivity σ of the three samples (A, B and C) obeys the Mott VRH conduction with an appropriate temperature dependence in the prefactor (σ = σ_0 exp [- (T_0 / T)] ~ p with p≈0.25) .This behavior can be explained by a VRH model where the transport occurs by hopping between localized states in the vicinity of the Fermi level, E_F, without creation of the Coulomb gap (CG). Of the contrary, no Efros-Shklovskii VRH is observed, suggesting that the density is constant in the vicinity of the E_F.