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在论证了晶体管低频噪声中的 g r噪声服从非高斯分布之后 ,提出了一种通过计算晶体管低频噪声的高阶累积量来判断是否含有 g r噪声的新方法 ,并通过实验验证了该方法的正确性。
After confirming that the gr noise in the low frequency noise of a transistor obeys non-Gaussian distribution, a new method to determine whether it contains gr noise by calculating the high-order cumulants of the low frequency noise of the transistor is proposed. The correctness of the method is verified by experiments .