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利用InSb晶片阳极氧化时的氧化速率依赖于晶片的载流子浓度这一特性,成功地显示出InSb扩散结剖面及其形貌,并由此测出了在不同条件下Zn,Cd在InSb中扩散的P-N结深度。
The InSb wafer anodization oxidation rate depends on the wafer carrier concentration of this feature successfully demonstrated InSb diffusion junction profile and morphology, and thus measured under different conditions Zn, Cd in InSb Diffusion PN junction depth.