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We fabricate p-channel metal-oxide-semiconductor-field-effect-transistors (PMOSFETs) with a HfSiAlON/MoAlN gate stack using a novel and practical gate-last process.In the process,SiO2/poly-Si is adopted as the dummy gate stack and replaced by an HfSiAlON/MoAiN gate stack after source/drain formation.Because of the high-k/metalgate stack formation after the 1000℃ source/drain ion-implant doping activation,the fabricated PMOSFET has good electrical characteristics.The devices saturation driving current is 2.71 × 10-4 A/μm (VGS =VDS =-1.5 V)and the off-state current is 2.78 × 10-9 A/μm.The subthreshold slope of 105mV/dec (VDs =-1.5 V),drain induced barrier lowering of 80mV/V and Vth of-0.3 V are obtained.The research indicates that the present PMOSFET could be a solution for high performance PMOSFET applications.