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考虑到GaAs具有受热分解的特性,采用热传导理论和半解析法研究了波长532nm的毫秒量级长脉冲激光致GaAs的表面热分解损伤.首先,建立了激光辐照GaAs的二维轴对称瞬态温度场及表面热分解损伤阈值的计算模型,模拟了吸收率不同时,GaAs的瞬态温度场分布及热分解损伤阈值.计算结果表明:较高的吸收率引起GaAs表面的温升较高,但所需的热分解损伤阈值较低;增加作用激光能量密度,GaAs表面发生热分解损伤随之提前.本文研究结果对激光与GaAs相互作用及其损伤机理的研究具有指导意义和实用价值.
Considering the thermal decomposition of GaAs, the thermal decomposition theory and the semi-analytical method were used to study the surface thermal decomposition of GaAs induced by long-wavelength pulsed laser at a wavelength of 532 nm.Firstly, two-dimensional axisymmetric transients of laser irradiated GaAs Temperature field and damage threshold of surface thermal decomposition model to simulate the transient temperature field distribution and thermal decomposition damage threshold of GaAs with different absorption rates.The calculation results show that the higher absorption rate causes the GaAs surface temperature to rise higher, However, the required thermal decomposition damage threshold is lower, the laser energy density is increased, and the thermal decomposition damage on the surface of GaAs is advanced. The results of this paper are instructive and practical for the study of the interaction between laser and GaAs and its damage mechanism.