论文部分内容阅读
本文利用MOSFET亚阈IV曲线对加固和非加固MOSFET的辐射感生界面陷阱密度进行了测量.分析和讨论了辐射感生的界面陷阱密度依赖于辐射总剂量和辐射剂量率的变化关系
In this paper, the MOSFET subthreshold IV curves were used to measure the trapped density of the radiation-induced interface of the reinforced and non-reinforced MOSFETs.The density of radiation-induced interface trap depended on the relationship between the total radiation dose and the radiation dose rate