提出了一种利用常见的二管 (包括选通管 ) EEPROM实现四值存储的方法。相对于用四管单元实现四值存储 [1] ,该方法节省了芯片面积 ,使 EEPROM芯片的存储量增加一倍。由于只是在读写控制电路上加以改进 ,故适用于几乎所有通常的二管结构的 EEPROM单元 ,且对单元性能影响较小。 A method to realize four-valued storage using common two-pipe (including gating pipe) EEPROM is proposed. Compared with the four-pipe unit to achieve four-valued storage [1], this method saves the chip area, so that the EEPROM chip storage capacity doubles. Since only the read-write control circuit to be improved, it applies to almost all the usual two-tube structure of EEPROM cells, and the impact on the unit performance is smaller.