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从理论上研究了凹槽栅GaAs离子注入MESFET的噪声和RF性能随不同掺杂分布的变化关系。考虑了注入能量、剂量以及不同的深能级密度的影响。指出了器件的性能随深能级密度的增加而退化,揭示了相应的物理机理。还指明存在一个最佳的栅凹槽深度。本文给出了一些设计规则,按照这些规则设计并制作出了最佳低噪声离子注入MESFET。
The relationship between the noise and the RF performance of the groove-gate GaAs ion-implanted MESFET with different doping distributions has been theoretically studied. The effects of implant energy, dose, and different deep-level densities are considered. It is pointed out that the performance of the device degrades with the increase of the density of the deep level, revealing the corresponding physical mechanism. It also indicates that there is an optimum depth of gate grooves. This article presents some design rules, according to these rules designed and produced the best low noise ion implantation MESFET.