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以第一近邻团簇作为基本结构单元,研究Si基二元共晶合金成分的形成规律,建立了分析Si基二元共晶合金成分的电子化学势均衡判据。给出描述Si基二元共晶合金成分的分子式,即Si基二元共晶合金成分=[团簇]1(连接原子)x。应用该判据给出的分子式,解释了实验上得到的部分Si基二元共晶合金成分。通过对SiAl、SiAu、SiCe、SiCo、SiCr、SiCu、SiFe、SiGd、SiHf、SiLi、SiMn、SiMo、SiNb、SiNi、SiOs、SiPd、SiRe、SiRh、SiRu、SiSc、SiTa、SiTh、SiTi、SiW、Si Y和SiZr等典型Si基二元共晶合金成分的分析研究,得到的设计成分与实验成分相比较,偏差均小于2个原子百分比。这说明该判据解释了部分Si基二元共晶合金成分的形成规律。
Taking the first neighbor cluster as the basic structural unit, the formation regularity of Si-based binary eutectic alloy was studied and the criterion for the analysis of electronic chemical potential equilibrium of Si-based binary eutectic alloy was established. The molecular formula describing the composition of the Si-based binary eutectic alloy is given as Si-based binary eutectic alloy composition = [cluster] 1 (connected atom) x. The formula given by this criterion is used to explain the experimentally obtained partial Si-based binary eutectic alloy composition. The SiN film is formed on the SiN film by SiAl thin film formation on SiAl, SiAu, SiCe, SiCo, SiCr, SiCu, SiFe, SiGd, SiHf, SiLi, SiMn, SiMo, SiNb, SiNi, SiOs, SiPd, SiRe, SiRh, SiRu, SiSc, SiTa, SiTh, Si Y and SiZr typical Si-based binary eutectic alloy composition analysis, the design components obtained compared with the experimental components, the deviation is less than 2 atomic percent. This shows that the criteria explain the formation of some Si-based binary eutectic alloy composition.