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采用脉冲微反技术研究了添加半导体氧化物对Ni基催化剂上CH_4、C_2H_6和C_2H_4的裂解积炭反应特性的影响。结果表明，n型半导体CeO_2的添加降低了CH_4和C_2H_6的积炭活性，而p型半导体Co_3O_4的添加则加速CH_4和C_2H_6的裂解积炭；而对于与CH4和C_2H_6活化机制不同的C_2H_4分子的活化，上述影响机制正好相反，n型半导体CeO_2的添加促进C_2H_4的裂解积炭反应，而p型半导体Co_3O_4的添加则抑制C_2H_4的裂解积炭反应。XPS分析表明，活性金属Ni与半导体氧化物之间存在的金属-半导体相互作用是这种影响机制的主要因素。
The effects of the addition of semiconductor oxides on the pyrolysis of CH_4, C_2H_6 and C_2H_4 on Ni-based catalysts were investigated by pulsed microreaction. The results show that the addition of n-type semiconductor CeO 2 decreases the coke activity of CH 4 and C 2 H 6, whereas the addition of p type semiconductor Co 3 O 4 accelerates the pyrolysis of CH 4 and C 2 H 6; while the activation of C 2 H 4 with different mechanisms of CH 4 and C 2 H 6 activation , The above-mentioned mechanism is just the opposite. The addition of n-type semiconductor CeO 2 promotes the pyrolysis of C 2 H 4 and the addition of p-type semiconductor Co 3 O 4 suppresses the pyrolysis of C 2 H 4. XPS analysis shows that the metal-semiconductor interaction between the active metal Ni and the semiconductor oxide is a major contributor to this mechanism.