采用过滤阴极真空电弧技术 ,通过施加 0— 2 0 0 0V衬底负偏压使沉积离子获得不同能级的入射能量 ,在单晶硅上制备了四面体非晶碳薄膜 .拉曼光谱分析表明 ,薄膜的结构为非晶sp3 骨架中镶嵌着平面关联长度小于 1nm的sp2 团簇 .原子力显微镜研究表明 :在低能级、富sp3 能量窗口和次高能级 ,薄膜中sp3 的含量越多 ,其表面就越光滑 ,应用sp3 浅注入生长机制能够圆满地解释薄膜表面形态与离子入射能量之间的关系 ;但在高能级 ,具有适当入射能量的离子对表面将起到溅射平滑作用 ,甚至可以得到比sp3 含量最高时均方根粗糙度更低的光滑表面 .纳米压入测试表明 ,高能 (-2 0 0 0V)沉积的四面体非晶碳膜具有比不加偏压时更高的硬度和杨氏模量 ,并具有比sp3 含量最高时更高的临界刮擦载荷 Filtered cathodic vacuum arc technique was used to fabricate tetrahedral amorphous carbon films on single crystal silicon by applying negative bias voltage of 0-2000V to deposit ions for different energy levels. Raman spectroscopy , And the structure of the film is sp2 clusters with an in-plane correlation length of less than 1 nm embedded in the sp3 framework.The atomic force microscopy studies show that at the low energy level, the sp3 energy-rich window and the next highest energy level, the more sp3 in the film, The smoother the application of the sp3 shallow implant growth mechanism can satisfactorily explain the relationship between the film surface morphology and the incident energy of the ions; however, at high energy levels, ions with appropriate incident energies will sputter smoothly on the surface and may even be obtained The smoothed surface has a lower rms roughness than the highest sp3 content.The nanoindentation tests show that tetrahedral amorphous carbon films deposited at high energy (-2 0 0V) have higher hardness and lower hardness than those without bias Young’s modulus and has a higher critical scratch load than the highest sp3 content