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Co has already been shown to have promissing properties with respect to self-aligned silicide technology. In view of its importance, is is essential to understand the behaviour of Co in Si. The purpose of this work is to report a detailed study of the deep level behaviour of Co in Si. Deep levels in N-type and P-type, due to Co-sputtering and RTP(Rapid Thermal Processing) at various temperature, were investigated by using DLTS technique. It has been found that Co-related defect levels at (Ec-0.20eV), (Ec-0.34eV), (Ec-0.36eV), (Ec-0.41eV) and (Ec-0.45eV) are produced only for N-type material. The concentration of defects is rather small and ranges from 2×1010 to 1×1011 cm-3. These defect levels can be attributed to Co atoms or to Co in combination with RTP-step and Co-defect complexes.
Co has already been shown to have promissing properties with respect to self-aligned silicide technology. In view of its importance, is is essential to understand the behavior of Co in Si. The purpose of this work is to report a detailed study of the deep Level behavior of Co in Si. Deep levels in N-type and P-type, due to Co-sputtering and RTP (Rapid Thermal Processing) at various temperatures, were investigated by using DLTS technique. It has been found that Co-related defects (Ec-0.34eV), (Ec-0.36eV), (Ec-0.41eV) and (Ec-0.45eV) are produced only for N-type material. The concentration of defects rather small and ranges from 2 × 1010 to 1 × 1011 cm-3. These defect levels can be attributed to Co atoms or to Co in combination with RTP-step and Co-defect complexes.