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利用单面抛光机和SiO2碱性抛光液进行了以硬盘NiP基板CMP去除速率为考核指标的工艺试验。针对抛光速率是受各个工艺因素共同影响这一特性,应用正交试验方法分析了CMP中5个重要工艺参数(抛光压力、抛光液流量、抛光盘转速、抛光液浓度,氧化剂质量分数)对硬盘NiP基板抛光去除速率的影响规律,并结合抛光机理对其进行了分析。试验分析表明,抛光压力为0.2 MPa,抛光液流量为500 mL/min,抛光盘转速为50 r/min,磨料质量分数为20%,氧化剂体积分数为0.3%时,可以得到较高的抛光速率,为740 nm/min。
Using single-side polishing machine and SiO2 alkaline polishing solution to hard disk NiP substrate CMP removal rate as an assessment index process test. Aiming at the fact that the polishing rate is affected by all process factors, orthogonal test is used to analyze the influence of five important process parameters (polishing pressure, polishing liquid flow, polishing disc rotation speed, polishing liquid concentration and oxidant mass fraction) NiP substrate polishing rate of removal of the law, combined with the polishing mechanism of its analysis. The experimental results show that the polishing rate is 0.2 MPa, the polishing fluid flow rate is 500 mL / min, the rotating speed of the polishing disc is 50 r / min, the abrasive mass fraction is 20% and the oxidant volume fraction is 0.3% At 740 nm / min.