实验中发现,传统结构的光泵浦垂直外腔面发射半导体激光器,随着泵浦功率密度的增加,器件的温升现象严重。这是由于传统结构中,势垒和量子阱间小的带隙差造成的。为了解决温升问题,采用PICS3D软件对传统结构进行优化设计。在吸收层中引入对泵浦光和激射光透明的AlGaAs层,提高对量子阱中的载流子的限制作用。计算结果表明,在增益和自发发射特性上,优化后的结构都有了很大提高。 The experiment found that the traditional structure of the optical pump vertical external cavity surface emitting semiconductor laser, with the pump power density increases, the temperature rise of the device is serious. This is due to the small bandgap difference between the potential barrier and the quantum well in the conventional structure. In order to solve the problem of temperature rise, PICS3D software is used to optimize the traditional structure. The introduction of an AlGaAs layer transparent to pump light and laser light in the absorber layer enhances the confinement of carriers in the quantum well. The calculated results show that the optimized structure has been greatly improved in gain and spontaneous emission characteristics.