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讨论了用准分子激光诱导非晶硅晶化法制备多晶硅薄膜晶体管的结构与工艺优化问题。用 Xe Cl准分子激光器对 PECVD法生长的非晶硅薄膜进行了诱导晶化处理 ,成功制备了多晶硅薄膜晶体管 ,获得最大场效应迁移率为 1 4.5cm2 /V· s,亚阈值斜率为 1 .9V/dec,开关电流比为 1 .0× 1 0 6的器件性能。
The structure and process optimization of polycrystalline silicon thin film transistors fabricated by excimer laser induced amorphous silicon crystallization are discussed. The amorphous silicon thin films grown by PECVD were crystallized by Xe Cl excimer laser. The polycrystalline silicon thin film transistors were successfully prepared. The maximum field-effect mobility was 15.5cm2 / V · s and the sub-threshold slope was 1. The X-ray diffraction 9V / dec, switching current ratio of 1. 0 × 106 device performance.