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研究了基于InP基的In0.65Ga0.35As/In0.52Al0.48As赝型高迁移率晶体管材料中纵向磁电阻的Shubnikov-deHaas(SdH)振荡效应和霍耳效应,通过对纵向磁电阻SdH振荡的快速傅里叶变换分析,获得了各子带电子的浓度,并因此求得了各子带能级相对于费米能级的位置.联立求解Schrdinger方程和Poisson方程,自洽计算了样品的导带形状、载流子浓度分布以及各子带能级和费米能级位置.理论计算和实验结果很好符合.实验和理论计算均表明,势垒层的掺杂电子几乎全部转移到了量子阱中,转移率在95%以上.
The Shubnikov-deHaas (SdH) oscillation effect and Hall effect of longitudinal magneto resistance in InP-based In0.65Ga0.35As / In0.52Al0.48As pseudomorphic high mobility transistor materials are investigated. Fast Fourier Transform (FFT) analysis, the concentration of each electron in each subband was obtained, and the position of each subband with respect to the Fermi level was obtained. Solve the Schrdinger equation and the Poisson equation jointly, Band shape, carrier concentration distribution, energy levels of subbands and the position of Fermi level.The theoretical calculation and experimental results are in good agreement.Experimental and theoretical calculations show that almost all of the doped electrons in the barrier layer are transferred to the quantum well In the transfer rate of 95% or more.