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过渡金属二硫属化物在电学、光学和机械电子领域展示了强大的应用潜力和价值.其中,二硫化钼作为场效应晶体管中绝缘栅极材料和沟道材料,得到了越来越多的关注.本文研究了基于场效应晶体管原理制备而成的多层二硫化钼光电探测器.通过光学显微镜和原子力显微镜表征了该器件的表面形貌,同时研究了该器件基于场效应晶体管的电学特性和作为光电探测器的光电特性.该器件中,二硫化钼的电子迁移率达到了80 cm2/(V·s),最高探测光电响应为5 A/W.该光电探测器的探测波长极广,并且在所有测试过程中器件稳定性优良.
Transition metal dichalcogenides have shown great potential and value in the field of electrical, optical and mechatronic applications, and more and more attention has been paid to molybdenum disulfide as an insulator gate material and channel material in field effect transistors In this paper, a multi-layer molybdenum disulfide photodetector based on the field effect transistor principle is studied.The surface morphology of the device is characterized by light microscopy and atomic force microscopy, and the electrical properties of the device based on the field effect transistor As the photoelectric property of the photodetector, the molybdenum disulfide has an electron mobility of 80 cm2 / (V · s) and a maximum detection photoelectric response of 5 A / W. The detection wavelength of the photodetector is very wide, The device has excellent stability during all tests.