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对不同真空度下得到的VO2(B)型薄膜的结晶状况、组分、电学性质和光学性质进行测试和分析,以探讨退火真空度对VO2(B)型薄膜的影响。以高纯五氧化二钒(V2O5)粉末(纯度高于99.99%,质量分数)为原料,采用真空蒸发——还原工艺,分别在高、低真空度下还原出VO2(B)型(空间群为C2/m)薄膜。利用X射线衍射(XRD)仪,X射线光电子能谱仪(XPS),电阻温度关系(TCR)测试仪和紫外可见分光光度计对薄膜进行测试,讨论了退火真空度对VO2(B)型薄膜的结晶状况、组分、电学性质和光学性质的影响。结果显示,在高、低真空度下退火,VO2(B)型薄膜出现的温度范围是不同的,在低真空度下退火出现的范围在400~480℃,而在高真空度下退火出现的范围只有400~440℃;高真空度退火得到薄膜的晶粒较大,透过率较低真空度得到的薄膜高7%~8%;但在低真空度下退火,薄膜中的V更易被还原,电阻温度系数绝对值更大,最大可达-2.4%/K。
The crystallization, composition, electrical properties and optical properties of VO2 (B) thin films obtained under different vacuum were tested and analyzed to investigate the effect of annealing vacuum on VO2 (B) thin films. The vanadium pentoxide (V2O5) powder (purity higher than 99.99%, mass fraction) was used as the raw material, and the VO2 (B) type was reduced under high vacuum and low vacuum For C2 / m) film. The films were tested by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), TCR and UV-Vis spectrophotometer. The crystalline condition, the composition, the electrical properties and the optical properties. The results show that the temperature range of VO2 (B) films is different at high and low degree of vacuum annealing, the range of annealing at low vacuum is in the range of 400-480 ℃, while the annealing at high vacuum The range is only 400-440 ℃; the film obtained by annealing in high vacuum degree has larger grain size and the transmittance of the film is 7% ~ 8% lower than the vacuum degree; however, the V in the film is more easily annealed under low vacuum Restore, absolute temperature coefficient of resistance greater, up to -2.4% / K.