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我们在 c 面蓝宝石上用常压 MOCVD 法得到了高质量 InGaN 外延层。研究表明,In 分凝系数不仅与生长温度有关,而且与 InGaN 薄膜的生长速度有关。观测到了在生长温度低至700℃,In 摩尔分数达0.20时生长的 InGaN 膜的强烈的能带边缘光致发光。本文还介绍了有关蓝光 InGaN/GaN 双异质结构 LED所取得的最初结论。
We obtained a high quality InGaN epitaxial layer by atmospheric MOCVD on c-plane sapphire. The results show that In coagulation coefficient is not only related to the growth temperature, but also related to the growth rate of InGaN thin films. Intense band edge photoluminescence of InGaN films grown at growth temperatures as low as 700 ° C and an In mole fraction of 0.20 was observed. This article also describes the initial conclusions about blue InGaN / GaN double heterostructure LEDs.