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利用直流磁控反应溅射法,制备氧化锡薄膜,利用扫描电镜等方法对氧化锡薄膜微观结构进行分析。在低真空下,对不同厚度的氧化锡薄膜进行场致发射测试,结果显示,在氧化锡薄膜厚度为60nm时,场致发射性能最佳,当电流密度为10μA/m2时,开启电压为4.5 V/μm,阴阳两极电场为7 V/μm时,有较佳的场发射密度,同时发光亮度达到2180 cd/m2,结果表明,氧化锡薄膜在场发射平板显示及真空电子器件方面具有较好的应用潜力。
SnO2 thin films were prepared by direct current magnetron reactive sputtering. The microstructure of SnO2 thin films was analyzed by scanning electron microscopy. Field emission measurements of tin oxide films of different thicknesses under low vacuum show that the field emission properties are best at a tin oxide film thickness of 60 nm and at a current density of 10 μA / m2, the turn-on voltage is 4.5 V / μm, and the electric field of yin and yang is 7 V / μm, a better field emission density and a luminous brightness of 2180 cd / m2 are obtained. The results show that the SnO2 thin film has better performance in field emission flat panel display and vacuum electronic devices Application potential.