据日本《电子材料》报道,日本NEC和Tokuyama公司共同开发了高品质的用于纳米结构超高分辨率的电子束曝光光刻胶。这是一种直径为0.7nm的低分子量光刻胶,其特点主要有:可实现目前世界最高的8nm分辨率;由于其难以晶体化,将线边缘粗糙度降低至1nm;因分子形态容易发生变化,可提高其溶解性,是环保型的安全光刻材料。 According to Japan’s “Electronic Materials” reported that Japan’s NEC and Tokuyama company jointly developed high-quality nanostructures for ultra-high resolution electron beam exposure resist. This is a 0.7nm diameter low molecular weight photoresist, its main features are: to achieve the world’s highest resolution of 8nm; due to its difficult to crystallize, the line edge roughness reduced to 1nm; due to molecular morphology prone Change, can improve its solubility, is environmentally friendly and safe lithography materials.