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为了提高碲镉汞红外探测器的性能,对ZnS钝化的碲镉汞光导型探测器进行了氢化处理研究,发现处理效果与氢等离子体密度和ZnS钝化层的厚度密切相关。对于ZnS层厚度固定的器件,通过改变氢等离子体密度发现低等离子体密度条件氢化处理更有利于提高器件的性能,表现在处理后器件响应信号提高且噪声下降,从光谱响应上表现为器件短波方向的响应抬高;对于同样的氢化处理条件,通过改变ZnS钝化层的厚度,发现具有较大厚度ZnS层的器件的氢化效果更好。SIMS测试发现氢化过程中氢离子可以穿过ZnS层到达ZnS与碲镉汞的界面处,分析认为氢离子对界面态起到了钝化作用,降低了界面态密度,提高了器件的性能。
In order to improve the performance of HgCdTe detectors, hydrogenation of ZnS-passivated HgCdTe detectors has been investigated. It is found that the treatment effect is closely related to the hydrogen plasma density and the thickness of the ZnS passivation layer. For devices with fixed ZnS layer thickness, hydrogen plasma density was found to change with low plasma density. Hydrogenation treatment is more conducive to improve the performance of the device. The response signal of the device is improved and the noise is reduced. From the spectral response, And the response of the ZnS layer increased. For the same hydrotreating conditions, the hydrogenation effect of ZnS layer with larger thickness was found to be better by changing the thickness of ZnS passivation layer. The SIMS test found that hydrogen ions can pass through the ZnS layer to reach the interface between ZnS and HgCdTe during the hydrogenation process. It is considered that the hydrogen ions passivate the interface state, reducing the interface state density and improving the performance of the device.