硅片粘合技术,是一种最有希望取代其它SOI方法的工艺,因为SOI层能完整地保留普通硅片结晶完美性。根据器件设计要求,选择晶向、掺杂物质和被粘合硅片的电阻率。即使采用～1μm的厚度,其底层氧化物的厚度也能修正。现在,已经可以获得均 Wafer bonding technology is one of the most promising processes for replacing other SOI processes because the SOI layer retains the perfect crystalline nature of the ordinary wafer. According to the device design requirements, select the crystal orientation, dopants and the resistivity of bonded silicon. Even with a thickness of ~ 1μm, the thickness of the underlying oxide can be corrected. Now, you can already get both