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采用分子束外延(MBE)技术在GaAs衬底上生长Al_(0.26)Ga_(0.74)As外延层,并在相同的退火条件下,分别退火0,10,20,40 min。利用扫描隧道显微镜对不同退火时间下Al_(0.26)Ga_(0.74)As/GaAs样品表面进行了扫描,得出不同退火时间Al_(0.26)Ga_(0.74)As/GaAs表面形貌特点。在40 min的热退火后,Al_(0.26)Ga_(0.74)As/GaAs表面完全熟化。本文采用基于热力学理论的半平台扩散理论模型估测获得平坦Al_(0.26)Ga_(0.74)As/GaAs薄膜表面所需退火时间,根据理论模型计算得到Al_(0.26)Ga_(0.74)As/GaAs平坦表面的退火时间和实验获得平坦表面所需退火时间一致。
The Al_ (0.26) Ga_ (0.74) As epitaxial layer was grown on GaAs substrate by molecular beam epitaxy (MBE) technique and annealed for 0, 10, 20 and 40 min respectively under the same annealing conditions. The surface morphology of Al_ (0.26) Ga_ (0.74) As / GaAs samples with different annealing time was scanned by scanning tunneling microscope, and the surface topographies of Al_ (0.26) Ga_ (0.74) As / GaAs with different annealing time were obtained. After 40 minutes thermal annealing, the surface of Al_ (0.26) Ga_ (0.74) As / GaAs matured completely. In this paper, the annealing time required to obtain a flat Al_ (0.26) Ga_ (0.74) As / GaAs thin film surface was estimated by using the theory of half-plate diffusion based on the thermodynamic theory. According to the theoretical model, the Al_ (0.26) Ga_ (0.74) As / The surface annealing time is consistent with the annealing time needed to obtain a flat surface experimentally.