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日本电气公司窄凹栅结构的低噪声 GaAsFET 已在12千兆赫下达到噪声系数1.68分贝,在4千兆赫下为0.7分贝。而三菱电机公司的缓变凹栅结构的封装器件在12千兆赫下最小噪声系数已达1.3分贝,未封装的芯片在16千兆赫下噪声为1.8分贝,在18千兆赫下为2.1分贝。功率 GaAsFET 目前三种不同的主要结构是:日本电气公司的缓变凹栅结构,富士通公司的源、漏下做 n~+层的结构和三菱电机公司的铜热沉上芯片倒装的结构。日本电气公司已达到6千兆赫,23瓦;8千兆赫,17瓦;18千兆赫,1.25瓦。三菱电机公司已达到15千兆赫,1.9瓦。
The low-pitched GaAs FET with narrow-gate structure at NEC has achieved a noise figure of 1.68 dB at 12 GHz and 0.7 dB at 4 GHz. While the Mitsubishi Corporation's graded concave-gate package has a minimum noise figure of 1.3 dB at 12 GHz. The unpackaged chip has a noise floor of 1.8 dB at 16 GHz and 2.1 dB at 18 GHz. Power GaAsFET The current three different main structures are: Japan's electric grid company slowly graded structure, Fujitsu sources, missed the structure to do n + layer and the Mitsubishi Corporation copper heat sink chip flip structure. Nippon Electric Company has reached 6 Ghz, 23 W; 8 Ghz, 17 W; 18 Ghz, 1.25 W. Mitsubishi Electric Corporation has reached 15 gigahertz, 1.9 watts.