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用ＸＰＳ研究射频－直流等离子体增强化学气相沉积（ＰＥＣＶＤ）获得的氮化碳（ＣＮ）薄膜的化学结构。Ｃ１ｓ 和Ｎ１ｓ芯能级电子谱分析表明：在ＣＮ膜中含有Ｎ－ｓｐ３ 和Ｎ－ｓｐ２ 两类化学结构，在高含Ｎ膜中还含有少量的Ｎ－ｓｐ 相，且代表Ｎ－ｓｐ３ 结构的原子比为１．２８，接近４∶３，证明此膜中存在类β－Ｃ３Ｎ４ 相。且增加膜中含Ｎ 量有利于提高类β－Ｃ３ Ｎ４ 相的含量。ＣＮ膜的化学结构在离子辐照下会发生轻微变化，结果表明，随离子剂量增加，Ｎ－ｓｐ３ ／Ｎ－ｓｐ２ 比增高，但膜中氮碳原子比Ｎ／Ｃ下降
The chemical structure of carbon nitride (CN) thin films obtained by RF-DC plasma enhanced chemical vapor deposition (PECVD) was studied by XPS. The electron spectrum analysis of C1s and N1s shows that there are two kinds of chemical structures of N-sp3 and N-sp2 in the CN film, a small amount of N-sp phase in the high-N-containing film and the N-sp3 The atomic ratio was 1.28, close to 4: 3, demonstrating the presence of β-C3N4-like phases in this film. And increasing the content of N in the film helps to improve the content of β-C3 N4 phase. The chemical structure of CN membrane changed slightly under ionizing irradiation. The results showed that with the increase of ion dose, the ratio of N-sp3 / N-sp2 increased but the ratio of nitrogen to carbon in the membrane decreased