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Single crystal GaN films of hexagonal modification have been fabricated on Al_2O_3/Si (001) substrates via a low pressure metalorganic chemical deposition (LP-MOCVD) method. The full width at half-maximum of (0002) X-ray diffraction peak for the GaN film 1.1 μm thick was 72 arcmin, and the mosaic structure of the film was the main cause of broadening to the X-ray diffraction peak. At room temperature, the photoluminescence (PL) spectrum of GaN exhibited near band edge emission peaking at 365 nm.
Single crystal GaN films of hexagonal modification have been fabricated on Al 2 O 3 / Si (001) substrates via a low pressure metalorganic chemical deposition (LP-MOCVD) method. The full width at half-maximum of (0002) X-ray diffraction peak for the GaN film 1.1 μm thick was 72 arcmin, and the mosaic structure of the film was the main cause of broadening to the X-ray diffraction peak. At room temperature, the photoluminescence (PL) spectrum of GaN was near band edge emission peaking at 365 nm.